Hanwha prosecution crystal, longji and REC for patent infringement, the latest response is coming!

Solar photovoltaic (pv) net news: South Korea hanwha Q - photovoltaic enterprises Cells to China's crystal cologne and Norway's REC filed a patent infringement lawsuit, is the latest response.

a few days ago, according to media pv - Magazine reported that South Korea hanwha Q - photovoltaic enterprises Cells to China crystal, longji and Norwegian REC filed a patent infringement lawsuit. Hanwha said in a statement, it is now in Dusseldorf, Germany court crystal energy and REC, to the United States international trade commission ( USITC) And the United States district court of Delaware suit all the three companies. In addition, hanwha allege its competitors USES the patent to passivation technology to improve the efficiency and performance of solar cells, to prevent infringement of these companies will products imported to Germany and the United States, where marketing and product sales.

for this event, longji in WeChat public issue of the a 'longji to hanwha launched a declaration of the patent infringement lawsuit media reports said that for HANWHAQCELLS media reported by the department of the company to the ITC launched 337 survey in the United States, as well as to the United States district court accused of crystal, REC, longji suspected of infringement of the patent right for the American, so far, On March 6) Longji has not yet received any official formal legal documents, before has not received formal business letter HANWHAQCELLS company.

longji further explain, at least at present the patent technology has initiated by others in Europe the patent is invalid, stability of patent right there is a big uncertainty. From a technical point of view, the current longji products is inconsistent with the patent technology involved methods, the patent is ALD technique, longji use PECVD technology technique.

at the same time, the crystal secco energy in the crystal secco energy against hanwha QCells related charges, 'the article said the opposition of the incident. Jing said, according to the patent litigation and claims of hanwha preliminary analysis of the company think the lack of technical or legal basis of litigation. And, according to media reports of litigation is based on the rapid growth of solar energy in the United States and Germany market, and in these markets microtek secco energy is a success.

in addition, crystal and longji, according to the two companies will get everything ready, positive response. Current related litigation is not substantial influence on enterprise's production and management, will not cause interference to the normal operation of company.

solar photovoltaic network statement: this information is reproduced from the power grid cooperation media or other Internet website, solar photovoltaic network published the article for the purpose of the information, does not mean that agree with his point of view or confirm its description. The article content is for reference only.

photovoltaic according to a recent policy discussion as a result, photovoltaic construction scale is not less than 2018; this year And, in & other; Policy to return to the market & throughout; The backdrop, in addition to the household, poverty alleviation, photovoltaic (pv) from the fixed feed-in tariff to the comprehensive competitive era. The local government & other; From the past independent distribution index became a coach and manager, in the province to lead the development of the province enterprises to carry out the national grand meeting. ” Around, then, to support the development of photovoltaic (pv), will launch the

under the low temperature 300 ℃, with laminated technology, in advance of fluoride deposited polycrystalline thin films on glass substrate, this method is similar to & alpha; - Si: H films. Under the low temperature deposited by plasma enhanced chemical vapor deposition method large polycrystalline silicon thin film. General p - Doped polycrystalline silicon thin film deposition with laminated technology, its thickness of 0. 28mm～5. 78mm。 Typical sedimentary conditions for: 60 SCCM SiF4 flow, hydrogen flow rate is 15 SCCM, deposition temperature is 300 ℃, microwave power is 200 w, the pressure to 53. 3Pa。 Bligh doped deposition, mixed in hydrogen 10 ppmph3, flow of 18 for SCCM. Each deposition and atomic hydrogen treatment duration for 10 s. Due to the deposition, doped with PH3 and original SiF4 add hydrogen plasma area, so that we can better control the proportion of membrane of P and Si. In the temperature range 100 k to 400 k, using hall effect and conductivity measurement to determine the carrier transport characteristics. Experiments show that the structure of materials is a function of film thickness, hole mobility increases with the increase of film thickness, the samples of the highest mobility zone is near the membrane surface. Carrier conductivity determined by the grain boundary barrier.